IRLB8748PBF vs BSC034N06NSATMA1 तुलना
विस्तृत दोनों ओर की तुलना IRLB8748PBF द्वारा Infineon और BSC034N06NSATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRLB8748PBF | BSC034N06NSATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 92 A | 100 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (junction) | -55C to +150C |
| Package Type | TO-220AB through-hole | — |
| माउंटिंग प्रकार | Through Hole | Surface Mount |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | — |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| RoHS स्थिति | Compliant (Pb-free PBF suffix) | Compliant |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |
| Technology | — | OptiMOS 5 |
| पैकेज | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| MSL स्तर | — | [DATA_NEEDED: MSL level] |