IRLB8748PBF vs BSC034N06NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB8748PBF disebabkan oleh Infineon dan BSC034N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLB8748PBF | BSC034N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 92 A | 100 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +150C |
| Package Type | TO-220AB through-hole | — |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | — |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |
| Technology | — | OptiMOS 5 |
| Kemasan | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |