IXDH20N120 vs IXDH20N120D1 तुलना

विस्तृत दोनों ओर की तुलना IXDH20N120 द्वारा Littelfuse और IXDH20N120D1 द्वारा Littelfuse. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ सक्रिय
Littelfuse
IXDH20N120D1 IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse

IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse

IXDH20N120D1 ✓ सक्रिय

विशेषता तुलना

पैरामीटर IXDH20N120 IXDH20N120D1
ब्रांड Littelfuse Littelfuse
श्रेणी IGBTs IGBTs
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Manufacturer IXYS (acquired by Littelfuse) —
Part Number IXDH20N120 —
Device Type NPT (Non-Punch Through) IGBT —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Continuous Collector Current (IC25) 38 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current 1 ms] [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES, continuous) +/- 20 V —
Gate-Emitter Voltage (VGEM, transient) [DATA_NEEDED: VGEM transient rating] —
Power Dissipation (PC) 200 W —
Junction Temperature (TJ) -40C to +150C [DATA_NEEDED: max TJ] —
Storage Temperature (Tstg) [DATA_NEEDED: storage temperature range] -55 C to +150 C
RBSOA Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C Square RBSOA at 1200 V / 38 A (snubberless hard switching)
Short-Circuit Withstand (tSC) 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] —
Diode Option Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) —
माउंटिंग प्रकार Through Hole Through Hole
पैकेज TO-247AD (3-lead) —
RoHS स्थिति ROHS3 Compliant Compliant
Operating Mode N-Channel IGBT —
Polarity — N-Channel
Technology — NPT (Non-Punch Through) IGBT with co-packaged FRED
Gate-Emitter Voltage (VGES) — +/- 20 V
Continuous Collector Current IC25 — 38 A (at TC = 25 C)
Continuous Collector Current IC90 — [DATA_NEEDED: IC90 value]
Maximum Power Dissipation (PC) — 200 W
कलेक्टर-एमिटर सैचुरेशन वोल्टेज (Vce(sat)) — 3.0 V typ at IC = 20 A
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) value]
Short Circuit Withstand Time (tSC) — [DATA_NEEDED: tSC value]
Operating Junction Temperature (TJ) — -55 C to +150 C
Package Type — TO-247AD (3-pin with tab)
Integrated Diode — Yes - co-packaged FRED (D1 variant)

डेटाशीट और संसाधन

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