IXDH20N120 vs IXDH20N120D1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IXDH20N120 sa pamamagitan ng Littelfuse at IXDH20N120D1 sa pamamagitan ng Littelfuse. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IXDH20N120 IXDH20N120D1
Brand Littelfuse Littelfuse
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer IXYS (acquired by Littelfuse) —
Part Number IXDH20N120 —
Device Type NPT (Non-Punch Through) IGBT —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Continuous Collector Current (IC25) 38 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current 1 ms] [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES, continuous) +/- 20 V —
Gate-Emitter Voltage (VGEM, transient) [DATA_NEEDED: VGEM transient rating] —
Power Dissipation (PC) 200 W —
Junction Temperature (TJ) -40C to +150C [DATA_NEEDED: max TJ] —
Storage Temperature (Tstg) [DATA_NEEDED: storage temperature range] -55 C to +150 C
RBSOA Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C Square RBSOA at 1200 V / 38 A (snubberless hard switching)
Short-Circuit Withstand (tSC) 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] —
Diode Option Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) —
Uri ng Pagpapasok Through Hole Through Hole
Packhaging TO-247AD (3-lead) —
Tindminan RoHS ROHS3 Compliant Compliant
Operating Mode N-Channel IGBT —
Polarity — N-Channel
Technology — NPT (Non-Punch Through) IGBT with co-packaged FRED
Gate-Emitter Voltage (VGES) — +/- 20 V
Continuous Collector Current IC25 — 38 A (at TC = 25 C)
Continuous Collector Current IC90 — [DATA_NEEDED: IC90 value]
Maximum Power Dissipation (PC) — 200 W
Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) — 3.0 V typ at IC = 20 A
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) value]
Short Circuit Withstand Time (tSC) — [DATA_NEEDED: tSC value]
Operating Junction Temperature (TJ) — -55 C to +150 C
Package Type — TO-247AD (3-pin with tab)
Integrated Diode — Yes - co-packaged FRED (D1 variant)

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