IXDH20N120 vs IXDH20N120D1 比較

詳細並排比較 IXDH20N120 由 Littelfuse 與 IXDH20N120D1 由 Littelfuse. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ 啟用中

規格比較

參數 IXDH20N120 IXDH20N120D1
品牌 Littelfuse Littelfuse
類別 IGBTs IGBTs
生命週期狀態 啟用中 啟用中
Manufacturer IXYS (acquired by Littelfuse) —
Part Number IXDH20N120 —
Device Type NPT (Non-Punch Through) IGBT —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Continuous Collector Current (IC25) 38 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current 1 ms] [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES, continuous) +/- 20 V —
Gate-Emitter Voltage (VGEM, transient) [DATA_NEEDED: VGEM transient rating] —
Power Dissipation (PC) 200 W —
Junction Temperature (TJ) -40C to +150C [DATA_NEEDED: max TJ] —
Storage Temperature (Tstg) [DATA_NEEDED: storage temperature range] -55 C to +150 C
RBSOA Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C Square RBSOA at 1200 V / 38 A (snubberless hard switching)
Short-Circuit Withstand (tSC) 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] —
Diode Option Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) —
安裝類型 Through Hole Through Hole
封裝 TO-247AD (3-lead) —
RoHS 狀態 ROHS3 Compliant Compliant
Operating Mode N-Channel IGBT —
Polarity — N-Channel
Technology — NPT (Non-Punch Through) IGBT with co-packaged FRED
Gate-Emitter Voltage (VGES) — +/- 20 V
Continuous Collector Current IC25 — 38 A (at TC = 25 C)
Continuous Collector Current IC90 — [DATA_NEEDED: IC90 value]
Maximum Power Dissipation (PC) — 200 W
集極-射極飽和電壓 (Vce(sat)) — 3.0 V typ at IC = 20 A
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) value]
Short Circuit Withstand Time (tSC) — [DATA_NEEDED: tSC value]
Operating Junction Temperature (TJ) — -55 C to +150 C
Package Type — TO-247AD (3-pin with tab)
Integrated Diode — Yes - co-packaged FRED (D1 variant)

資料表與資源

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