K9PDG08U5M vs K9MDG08U5M तुलना
विस्तृत दोनों ओर की तुलना K9PDG08U5M द्वारा Samsung Electronics और K9MDG08U5M द्वारा Samsung Electronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ जीवन की समाप्ति
विशेषता तुलना
| पैरामीटर | K9PDG08U5M | K9MDG08U5M |
|---|---|---|
| ब्रांड | Samsung Electronics | Samsung Electronics |
| श्रेणी | EEPROM | Memory ICs |
| लाइफसाइकिल स्थिति | उत्पादन बंद | सक्रिय |
| मेमोरी प्रकार | NAND Flash (SLC) | MLC Large Block NAND Flash |
| Density | 4 Gbit | 16 Gbit (2 GB) |
| संगठन | x8 (multiplexed I/O) | 16G x 8 bit |
| सप्लाई वोल्टेज | [DATA_NEEDED: supply voltage range] | — |
| पैकेज | TSOP1-48 | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | unknown |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| इंटरफ़ेस | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |