K9PDG08U5M vs K9MDG08U5M Perbandingan
Perbandingan bersamaan detil K9PDG08U5M dari Samsung Electronics dan K9MDG08U5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Akhir Hidup
Perbandingan Spesifikasi
| Parameter Umum | K9PDG08U5M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Tipe Memori | NAND Flash (SLC) | MLC Large Block NAND Flash |
| Density | 4 Gbit | 16 Gbit (2 GB) |
| Organisasi | x8 (multiplexed I/O) | 16G x 8 bit |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage range] | — |
| Paket | TSOP1-48 | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Antarmuka | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |