K9PDG08U5M vs K9MDG08U5M مقایسه
مقایسه دقیق کنار به کنار K9PDG08U5M توسط Samsung Electronics و K9MDG08U5M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ پایان تولید
مقایسه مشخصات
| پارامتر | K9PDG08U5M | K9MDG08U5M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | EEPROM | Memory ICs |
| وضعیت چرخه عمر | پایان عمر محصول | فعال |
| نوع حافظه | NAND Flash (SLC) | MLC Large Block NAND Flash |
| Density | 4 Gbit | 16 Gbit (2 GB) |
| سازمان | x8 (multiplexed I/O) | 16G x 8 bit |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage range] | — |
| بسته‌بندی | TSOP1-48 | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| نوع نصب | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| رابط | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |