MPX2100AP vs MPX2100D तुलना
विस्तृत दोनों ओर की तुलना MPX2100AP द्वारा STMicroelectronics और MPX2100D द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
STMicroelectronics
MPX2100AP - 100kPa Absolute Pressure Sensor | STMicroelectronics
MPX2100AP ✓ सक्रियविशेषता तुलना
| पैरामीटर | MPX2100AP | MPX2100D |
|---|---|---|
| ब्रांड | STMicroelectronics | NXP Semiconductors |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 0 to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| आउटपुट प्रकार | Analog Voltage (Wheatstone bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Full-Scale Output Span | 40 mV typical at 10 V excitation | — |
| Offset (Zero Pressure) | 0 mV typical | — |
| Excitation Voltage | 10 V DC typical | — |
| Linearity | ±0.25% (Full-Scale Span) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Temperature Compensation | On-chip, ±0.5% over 0°C to 85°C | — |
| ऑपरेटिंग तापमान रेंज | -40°C to +125°C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Port Style | Axial Male Tube, 0.19 inch (4.93 mm) | — |
| Package Type | 4-SIP Module | — |
| Sensor Technology | Silicon Piezoresistive | — |
| Media Compatibility | Dry gases (non-corrosive) | — |
| माउंटिंग प्रकार | Through-Hole (SIP) | Through-hole SIP module |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance status] | Compliant [DATA_NEEDED: confirm from NXP product page] |
| MSL स्तर | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| पैकेज | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |