MPXM2010GS vs MPXV2010GP तुलना
विस्तृत दोनों ओर की तुलना MPXM2010GS द्वारा NXP Semiconductors और MPXV2010GP द्वारा STMicroelectronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MPXM2010GS - 10kPa Vented Gauge Pressure Sensor | NXP/STMicro
MPXM2010GS ✓ सक्रियSTMicroelectronics
MPXV2010GP - 10kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV2010GP ✓ सक्रियविशेषता तुलना
| पैरामीटर | MPXM2010GS | MPXV2010GP |
|---|---|---|
| ब्रांड | NXP Semiconductors | STMicroelectronics |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | 75 kPa |
| आउटपुट प्रकार | Wheatstone Bridge (analog, differential mV) | Analog, ratiometric, mV output |
| Output Voltage Span | 0 mV to 25 mV at 10 V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal at 10 V) | 2.5 mV/kPa nominal at 10 V |
| Excitation Voltage | 10 V (max 16 V per NXP datasheet) | — |
| सप्लाई करंट | 6 mA (typical at 10 V excitation) | — |
| ऑपरेटिंग तापमान | -40 °C to +125 °C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Linearity | [DATA_NEEDED: linearity %] | — |
| Temperature Compensation | On-chip (laser-trimmed thin-film) | — |
| Port Configuration | Top port, male 0.12" (2.97 mm) tube | Single vertical side port, 0.13" (3.17 mm) tube |
| पैकेज | 5-SMD Module, top port | 8-SMD, Gull Wing, Side Port (Case 344B-01) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Packing | Reel-Reel 13" Q2 NDP | — |
| Min Package Quantity | 400 | — |
| Min Order Quantity | 400 | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage (Vex) | — | 10 V typical (max 16 V) |
| Full-Scale Output (Span) at 10 V | — | 25 mV nominal at 10 kPa |
| Zero Pressure Output (Offset) | — | 0 mV to 1.0 mV |
| Pressure Hysteresis | — | 1.0 kPa (typical) |
| Response Time | — | 1.0 ms (typical) |
| Technology | — | Silicon piezoresistive MEMS, on-chip temp compensated |