MPXM2010GS vs MPXV2010GP Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPXM2010GS tarafından NXP Semiconductors ve MPXV2010GP tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
STMicroelectronics
MPXV2010GP - 10kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV2010GP ✓ AktifÖzellik Karşılaştırması
| Parametre | MPXM2010GS | MPXV2010GP |
|---|---|---|
| Marka | NXP Semiconductors | STMicroelectronics |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | 75 kPa |
| Çıkış Türü | Wheatstone Bridge (analog, differential mV) | Analog, ratiometric, mV output |
| Output Voltage Span | 0 mV to 25 mV at 10 V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal at 10 V) | 2.5 mV/kPa nominal at 10 V |
| Excitation Voltage | 10 V (max 16 V per NXP datasheet) | — |
| Besleme Akımı | 6 mA (typical at 10 V excitation) | — |
| İşletim Sıcaklığı | -40 °C to +125 °C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Linearity | [DATA_NEEDED: linearity %] | — |
| Temperature Compensation | On-chip (laser-trimmed thin-film) | — |
| Port Configuration | Top port, male 0.12" (2.97 mm) tube | Single vertical side port, 0.13" (3.17 mm) tube |
| Paket | 5-SMD Module, top port | 8-SMD, Gull Wing, Side Port (Case 344B-01) |
| Montaj Türü | Surface Mount | Surface Mount |
| Packing | Reel-Reel 13" Q2 NDP | — |
| Min Package Quantity | 400 | — |
| Min Order Quantity | 400 | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage (Vex) | — | 10 V typical (max 16 V) |
| Full-Scale Output (Span) at 10 V | — | 25 mV nominal at 10 kPa |
| Zero Pressure Output (Offset) | — | 0 mV to 1.0 mV |
| Pressure Hysteresis | — | 1.0 kPa (typical) |
| Response Time | — | 1.0 ms (typical) |
| Technology | — | Silicon piezoresistive MEMS, on-chip temp compensated |