MPXM2010GS vs MPXV2010GP Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPXM2010GS disebabkan oleh NXP Semiconductors dan MPXV2010GP disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
MPXV2010GP - 10kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV2010GP ✓ AktifPengandingan Spesifikasi
| Parametr | MPXM2010GS | MPXV2010GP |
|---|---|---|
| Merek | NXP Semiconductors | STMicroelectronics |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | 75 kPa |
| Jenis Output | Wheatstone Bridge (analog, differential mV) | Analog, ratiometric, mV output |
| Output Voltage Span | 0 mV to 25 mV at 10 V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal at 10 V) | 2.5 mV/kPa nominal at 10 V |
| Excitation Voltage | 10 V (max 16 V per NXP datasheet) | — |
| Arus Pemberi Arus | 6 mA (typical at 10 V excitation) | — |
| Suhu Operasi | -40 °C to +125 °C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Linearity | [DATA_NEEDED: linearity %] | — |
| Temperature Compensation | On-chip (laser-trimmed thin-film) | — |
| Port Configuration | Top port, male 0.12" (2.97 mm) tube | Single vertical side port, 0.13" (3.17 mm) tube |
| Kemasan | 5-SMD Module, top port | 8-SMD, Gull Wing, Side Port (Case 344B-01) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packing | Reel-Reel 13" Q2 NDP | — |
| Min Package Quantity | 400 | — |
| Min Order Quantity | 400 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage (Vex) | — | 10 V typical (max 16 V) |
| Full-Scale Output (Span) at 10 V | — | 25 mV nominal at 10 kPa |
| Zero Pressure Output (Offset) | — | 0 mV to 1.0 mV |
| Pressure Hysteresis | — | 1.0 kPa (typical) |
| Response Time | — | 1.0 ms (typical) |
| Technology | — | Silicon piezoresistive MEMS, on-chip temp compensated |