MRFG35003NT1 vs MRFG35010NT1 तुलना
विस्तृत दोनों ओर की तुलना MRFG35003NT1 द्वारा NXP Semiconductors और MRFG35010NT1 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MRFG35003NT1 | MRFG35010NT1 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Transistors | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| ट्रांज़िस्टर प्रकार | GaAs pHEMT N-channel RF Power FET | GaAs pHEMT RF Power FET |
| Technology | Gallium Arsenide Pseudomorphic HEMT | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Frequency | 3.55 GHz | — |
| Rated Drain Voltage (VDS max) | 15 V | — |
| Continuous Drain Current | 1.3 A | — |
| Output Power (CW, typical) | 3 W | — |
| Power Gain (Gpss, min) | 11.5 dB at 3.55 GHz | — |
| Test Bias Voltage | 12 V | — |
| Test Quiescent Current (IDQ) | 55 mA (small-signal); 650 mA (W-CDMA pulsed) | — |
| Operating Class | Class AB linear | — |
| Matching | Unmatched (external matching network required) | — |
| पैकेज / केस | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 flanged ceramic |
| माउंटिंग प्रकार | Surface Mount | Chassis-mount / flange-bolt |
| Maximum Channel Temperature | 150 °C | — |
| RoHS स्थिति | Compliant | [DATA_NEEDED: RoHS status] |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Configuration | — | Unmatched, common source |
| Class of Operation | — | Class AB linear |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |