MRFG35003NT1 vs MRFG35010NT1 比較
詳細並排比較 MRFG35003NT1 由 NXP Semiconductors 與 MRFG35010NT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRFG35003NT1 | MRFG35010NT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Transistors | MOSFETs |
| 生命週期狀態 | 啟用中 | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| 電晶體類型 | GaAs pHEMT N-channel RF Power FET | GaAs pHEMT RF Power FET |
| Technology | Gallium Arsenide Pseudomorphic HEMT | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Frequency | 3.55 GHz | — |
| Rated Drain Voltage (VDS max) | 15 V | — |
| Continuous Drain Current | 1.3 A | — |
| Output Power (CW, typical) | 3 W | — |
| Power Gain (Gpss, min) | 11.5 dB at 3.55 GHz | — |
| Test Bias Voltage | 12 V | — |
| Test Quiescent Current (IDQ) | 55 mA (small-signal); 650 mA (W-CDMA pulsed) | — |
| Operating Class | Class AB linear | — |
| Matching | Unmatched (external matching network required) | — |
| 封裝 / 外殼 | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 flanged ceramic |
| 安裝類型 | Surface Mount | Chassis-mount / flange-bolt |
| Maximum Channel Temperature | 150 °C | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Configuration | — | Unmatched, common source |
| Class of Operation | — | Class AB linear |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |