MRFG35003NT1 vs MRFG35010NT1 مقایسه
مقایسه دقیق کنار به کنار MRFG35003NT1 توسط NXP Semiconductors و MRFG35010NT1 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | MRFG35003NT1 | MRFG35010NT1 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | Transistors | MOSFETs |
| وضعیت چرخه عمر | فعال | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| نوع ترانزیستور | GaAs pHEMT N-channel RF Power FET | GaAs pHEMT RF Power FET |
| Technology | Gallium Arsenide Pseudomorphic HEMT | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Frequency | 3.55 GHz | — |
| Rated Drain Voltage (VDS max) | 15 V | — |
| Continuous Drain Current | 1.3 A | — |
| Output Power (CW, typical) | 3 W | — |
| Power Gain (Gpss, min) | 11.5 dB at 3.55 GHz | — |
| Test Bias Voltage | 12 V | — |
| Test Quiescent Current (IDQ) | 55 mA (small-signal); 650 mA (W-CDMA pulsed) | — |
| Operating Class | Class AB linear | — |
| Matching | Unmatched (external matching network required) | — |
| بسته‌بندی / کیس | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 flanged ceramic |
| نوع نصب | Surface Mount | Chassis-mount / flange-bolt |
| Maximum Channel Temperature | 150 °C | — |
| وضعیت RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Configuration | — | Unmatched, common source |
| Class of Operation | — | Class AB linear |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |