STW45NM60-H vs STW45NM60 तुलना
विस्तृत दोनों ओर की तुलना STW45NM60-H द्वारा STMicroelectronics और STW45NM60 द्वारा STMicroelectronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ सक्रियविशेषता तुलना
| पैरामीटर | STW45NM60-H | STW45NM60 |
|---|---|---|
| ब्रांड | STMicroelectronics | STMicroelectronics |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | MDmesh Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| ऑपरेटिंग तापमान रेंज | -55 °C to +150 °C (TJ) | -65 °C to +150 °C (junction) |
| पैकेज | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | Outstanding (MDmesh process) |
| RoHS स्थिति | Compliant | Compliant |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: maximum Vgs rating] |
| Continuous Drain Current (Id) at Tc=25°C | — | 45 A |
| Typical Rds(on) at Vgs=10V | — | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | — | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | — | 417 W |
| Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Avalanche Ruggedness | — | Excellent |
| Lead-Free | — | Yes |