STW45NM60-H vs STW45NM60 比較
詳細並排比較 STW45NM60-H 由 STMicroelectronics 與 STW45NM60 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ 啟用中規格比較
| 參數 | STW45NM60-H | STW45NM60 |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | MDmesh Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| 工作溫度範圍 | -55 °C to +150 °C (TJ) | -65 °C to +150 °C (junction) |
| 封裝 | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | Outstanding (MDmesh process) |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: maximum Vgs rating] |
| Continuous Drain Current (Id) at Tc=25°C | — | 45 A |
| Typical Rds(on) at Vgs=10V | — | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | — | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | — | 417 W |
| Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Avalanche Ruggedness | — | Excellent |
| Lead-Free | — | Yes |