STW45NM60-H vs STW45NM60 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng STW45NM60-H sa pamamagitan ng STMicroelectronics at STW45NM60 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ NakahandaSTMicroelectronics
STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics
STW45NM60 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | STW45NM60-H | STW45NM60 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | MDmesh Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ) | -65 °C to +150 °C (junction) |
| Packhaging | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | Outstanding (MDmesh process) |
| Tindminan RoHS | Compliant | Compliant |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: maximum Vgs rating] |
| Continuous Drain Current (Id) at Tc=25°C | — | 45 A |
| Typical Rds(on) at Vgs=10V | — | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | — | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | — | 417 W |
| Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Avalanche Ruggedness | — | Excellent |
| Lead-Free | — | Yes |