1ED020I12B2XUMA1 vs 1EDB9275FXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED020I12B2XUMA1 dari Infineon dan 1EDB9275FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED020I12B2XUMA1 1EDB9275FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Coreless transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms 3 kVrms
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
Paket PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8 (150 mil)
Creepage Distance 8 mm —
Suhu Kerja -40 °C to +125 °C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL-3 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Compliance RoHS compliant —
Fungsi — Isolated single-channel gate driver (high-side, inverting)
Konfigurasi Output — High-side half-bridge
Peak Source/Sink Current — 9 A
Input Voltage (VDD) — 3 V to 15 V
Common-Mode Transient Immunity (CMTI) — 300 V/ns
Clamping Response Time — 20 ns
Propagation Delay — [DATA_NEEDED: propagation delay value]
Input Logic — Inverting
Rentang Suhu Kerja — -40 C to +125 C
Status RoHS — Compliant

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