1ED020I12B2XUMA1 vs 1EDB9275FXUMA1 Comparison

Detailed side-by-side comparison of 1ED020I12B2XUMA1 by Infineon and 1EDB9275FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1ED020I12B2XUMA1

1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon

1ED020I12B2XUMA1 βœ“ Active

Specification Comparison

Parameter 1ED020I12B2XUMA1 1EDB9275FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.65 $1.62
Driver Type Single-channel IGBT gate driver, galvanically isolated β€”
Isolation Technology Coreless transformer (magnetic coupling) Coreless transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms 3 kVrms
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink β€”
Propagation Delay (typ.) 35 ns β€”
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET β€”
DESAT Protection Yes (programmable threshold) β€”
Miller Clamp Yes (integrated 2 A clamp FET) β€”
Input Supply (VCC1) 5 V (logic side) β€”
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V β€”
Package PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8 (150 mil)
Creepage Distance 8 mm β€”
Operating Temperature -40 Β°C to +125 Β°C β€”
Mounting Type Surface Mount Surface Mount
MSL Level MSL-3 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Compliance RoHS compliant β€”
Function β€” Isolated single-channel gate driver (high-side, inverting)
Output Configuration β€” High-side half-bridge
Peak Source/Sink Current β€” 9 A
Input Voltage (VDD) β€” 3 V to 15 V
Common-Mode Transient Immunity (CMTI) β€” 300 V/ns
Clamping Response Time β€” 20 ns
Propagation Delay β€” [DATA_NEEDED: propagation delay value]
Input Logic β€” Inverting
Operating Temperature Range β€” -40 C to +125 C
RoHS Status β€” Compliant

Datasheets & Resources

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