1ED3127MU12FXUMA1 vs 2EDN7533RXTMA1 Perbandingan

Perbandingan bersamaan detil 1ED3127MU12FXUMA1 dari Infineon dan 2EDN7533RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3127MU12FXUMA1 2EDN7533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel isolated gate driver Dual-channel low-side gate driver
Jumlah Output 1 —
Konfigurasi Output High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns 19 ns
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
Rentang Suhu Kerja -40C to +125C —
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
Paket PG-DSO-8-72 (SOIC-8 wide-body) PG-TSSOP-8 (HTSSOP) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Suhu Hubung Kerja — -40 C to +150 C

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