1ED3142MC12HXUMA1 vs 2ED21064S06JXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3142MC12HXUMA1 dari Infineon dan 2ED21064S06JXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3142MC12HXUMA1 2ED21064S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number 1ED3142MC12HXUMA1 —
Product Family EiceDRIVER X3 Compact —
Driver Type Isolated single-channel gate driver —
Isolation Technology Coreless transformer (galvanic) —
Isolation Voltage 3000 Vrms —
Number of Channels 1 —
Jumlah Output 2 (separate source/sink) —
Configuration Inverting, Non-Inverting Half-Bridge (2 outputs, non-inverting)
Source Drive Current 6 A —
Sink Drive Current 6.5 A —
Maximum Rise Time 20 ns —
Maximum Fall Time 20 ns —
Propagation Delay (typ.) 40 ns —
Supported Switches IGBT, MOSFET, SiC MOSFET —
Paket PG-DSO-8 (PG-LDSO-8-1) PG-DSO-14 (14-pin SOIC)
Tipe Mounting Surface Mount Surface Mount
EU RoHS Compliant —
Part Status Active —
ECCN EAR99 —
Fungsi — High-Side and Low-Side Gate Driver
Topologi — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Suhu Kerja — -40C to +125C
Level MSL — [DATA_NEEDED: MSL level]
Status RoHS — ROHS3 Compliant
Negative Gate Drive Robustness — -0.7 V

Spek dan Sumber

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