1ED3142MC12HXUMA1 vs 2ED21064S06JXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3142MC12HXUMA1 sa pamamagitan ng Infineon at 2ED21064S06JXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ NakahandaInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3142MC12HXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Bilang ng Outputs | 2 (separate source/sink) | — |
| Configuration | Inverting, Non-Inverting | Half-Bridge (2 outputs, non-inverting) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Packhaging | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-14 (14-pin SOIC) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Fungsi | — | High-Side and Low-Side Gate Driver |
| Topolohiya | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperature na Operasyon | — | -40C to +125C |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | — | ROHS3 Compliant |
| Negative Gate Drive Robustness | — | -0.7 V |