1EDN7126GXTMA1 vs 1EDN7116GXTMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7126GXTMA1 dari Infineon dan 1EDN7116GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7126GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Configuration | Non-Inverting | — |
| Channel Type | Single | — |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | — |
| Peak Source Current | 1.5 A | 2 A (typ) |
| Peak Sink Current | 1.5 A | 4 A (typ) |
| Common-Mode Voltage (CMR) | 200 V | — |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | — |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | — |
| Rentang Suhu Kerja | -40C to +125C | -40 °C to +125 °C |
| Paket | PG-VSON-10-4 | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL3 |
| Status RoHS | Compliant | Compliant |
| Reach | Compliant | — |
| Lead-Free | Yes | — |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |