1EDN7126GXTMA1 vs 1EDN7116GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7126GXTMA1 disebabkan oleh Infineon dan 1EDN7116GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7126GXTMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 2 A (typ)
Peak Sink Current 1.5 A 4 A (typ)
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Gambaran Suhu Operasi -40C to +125C -40 °C to +125 °C
Kemasan PG-VSON-10-4 PG-VSON-10-4 (3.0 mm × 3.0 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] MSL3
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga