1EDN7136UXTSA1 vs 1EDI3033ASXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7136UXTSA1 dari Infineon dan 1EDI3033ASXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7136UXTSA1 1EDI3033ASXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-side / Low-side gate driver IC Isolated single-channel gate driver
Driven Device Type GaN HEMT, N-channel MOSFET —
Jumlah Output 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Rentang Suhu Kerja -40 C to +150 C —
Paket TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-20-91 (wide-body)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes (per Infineon product family convention) —
Level MSL [DATA_NEEDED: MSL rating] —
Technology — Coreless transformer isolation
Output Current (Source/Sink) — 12 A typical
Isolation Voltage (Vrms) — 5700 Vrms
Number of Channels — 1
Propagation Delay — 60 ns typical
Target Power Device — SiC MOSFET, IGBT
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Suhu Kerja — -40 C to +125 C
Short-Circuit Protection — DESAT with programmable blanking
Miller Clamp — Active Miller clamp integrated
Bootstrap Diode — Integrated
Functional Safety — ISO 26262 ASIL D ready
Creepage Distance — 8 mm (typical for wide-body DSO-20)
Compliance — RoHS compliant

Spek dan Sumber

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