1EDN7146UXTSA1 vs 1ED3124MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7146UXTSA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7146UXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| Waktu naik | [DATA_NEEDED: typical rise time ns] | 15 ns |
| Waktu Menurun | [DATA_NEEDED: typical fall time ns] | 30 ns |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| Rentang Suhu Kerja | -40C to +125C | — |
| Paket | PG-VSON-1 (6-pin with exposed pad) | PG-DSO-8 (DSO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Jumlah Output | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Suhu Kerja | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |