1EDN7146UXTSA1 vs 1ED3124MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7146UXTSA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7146UXTSA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
Masa Pertambahan [DATA_NEEDED: typical rise time ns] 15 ns
Masa jatuh [DATA_NEEDED: typical fall time ns] 30 ns
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
Gambaran Suhu Operasi -40C to +125C —
Kemasan PG-VSON-1 (6-pin with exposed pad) PG-DSO-8 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Bilangan Output — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Suhu Operasi — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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