2ED3140MC12LXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED3140MC12LXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 2ED3140MC12LXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated Gate Driver —
Topologi Dual-channel, half-bridge capable —
Number of Channels 2 —
Peak Source Current 6 A 13.5 A
Peak Sink Current 6.5 A 14 A
Isolation Voltage (Vrms) 5700 Vrms —
Isolation Technology Capacitive coupling (coreless transformer) Magnetic coupling (coreless transformer)
UVLO Threshold 8.5 V —
Supported Switches IGBT, MOSFET, SiC MOSFET up to 2300 V —
Dead-Time Control Integrated, resistor-programmable —
Paket PG-DSO-14-71 (DSO-14 wide-body, 300 mil) PG-DSO-8 (DSO-8)
Rentang Suhu Kerja [DATA_NEEDED: operating temperature] —
Propagation Delay [DATA_NEEDED: propagation delay] —
Creepage Distance >8 mm (per package) —
Safety Certification UL 1577 recognized —
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes / Compliant —
Channel Configuration Independent or half-bridge —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Jumlah Output — 1
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Waktu naik — 15 ns
Waktu Menurun — 30 ns
Suhu Kerja — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
Status RoHS — Compliant

Spek dan Sumber

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