2ED3140MC12LXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2ED3140MC12LXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2ED3140MC12LXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Isolated Gate Driver | — |
| Topolohiya | Dual-channel, half-bridge capable | — |
| Number of Channels | 2 | — |
| Peak Source Current | 6 A | 13.5 A |
| Peak Sink Current | 6.5 A | 14 A |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Isolation Technology | Capacitive coupling (coreless transformer) | Magnetic coupling (coreless transformer) |
| UVLO Threshold | 8.5 V | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET up to 2300 V | — |
| Dead-Time Control | Integrated, resistor-programmable | — |
| Packhaging | PG-DSO-14-71 (DSO-14 wide-body, 300 mil) | PG-DSO-8 (DSO-8) |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay] | — |
| Creepage Distance | >8 mm (per package) | — |
| Safety Certification | UL 1577 recognized | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes / Compliant | — |
| Channel Configuration | Independent or half-bridge | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Bilang ng Outputs | — | 1 |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Oras ng Pagtaas | — | 15 ns |
| Time ng Pagbaba | — | 30 ns |
| Temperature na Operasyon | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Tindminan RoHS | — | Compliant |