2EDL6014ACG2DXTMA1 vs 2EDL8033G4BXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL6014ACG2DXTMA1 dari Infineon dan 2EDL8033G4BXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL6014ACG2DXTMA1 2EDL8033G4BXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (HS + LS)
Konfigurasi Output Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Suhu Kerja -40 C to +125 C —
Paket 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-VDSON-8-5
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction-isolated (non-galvanic)
Tipe Mounting Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Topologi — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Input Logic Compatibility — TTL
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Status RoHS — Compliant
Marking Code — 2ED8033G4B

Spek dan Sumber

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