2EDL8033G4BXTMA1 vs IR2104STRPBF Perbandingan

Perbandingan bersamaan detil 2EDL8033G4BXTMA1 dari Infineon dan IR2104STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4BXTMA1 IR2104STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $0,59
Topologi Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL 3.3 V, 5 V, 15 V logic
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Paket PG-VDSON-8-5 8-SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Marking Code 2ED8033G4B —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
Jumlah Output — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Rentang Suhu Kerja — -40 C to +150 C

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon