2EDL8033G4BXTMA1 vs IR2104STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL8033G4BXTMA1 disebabkan oleh Infineon dan IR2104STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL8033G4BXTMA1 IR2104STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $0.59
Tetstruktur Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL 3.3 V, 5 V, 15 V logic
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Kemasan PG-VDSON-8-5 8-SOIC (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Marking Code 2ED8033G4B —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
Bilangan Output — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Gambaran Suhu Operasi — -40 C to +150 C

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