2EDL8033G4BXTMA1 vs IR2104STRPBF 比較

詳細並排比較 2EDL8033G4BXTMA1 由 Infineon 與 IR2104STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 啟用中
Infineon
IR2104STRPBF IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF ✓ 啟用中

規格比較

參數 2EDL8033G4BXTMA1 IR2104STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $0.59
拓撲 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL 3.3 V, 5 V, 15 V logic
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
封裝 PG-VDSON-8-5 8-SOIC (SOIC-8)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Marking Code 2ED8033G4B —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
輸出數量 — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
工作溫度範圍 — -40 C to +150 C

資料表與資源

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