2EDL8034G4CXTMA1 vs 2EDL6014ACG2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8034G4CXTMA1 dari Infineon dan 2EDL6014ACG2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8034G4CXTMA1 2EDL6014ACG2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge (High-Side / Low-Side) Half-Bridge Gate Driver
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Jumlah Output 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) Isolated (level-shifted floating high-side)
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Suhu Hubung Kerja -40 C to +125 C —
Paket PG-VDSON-10-2 (DSN-10) with exposed pad 11-WQFN (2.2 x 2.2 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL level] —
Number of Channels — 2 (high-side + low-side)
Konfigurasi Output — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Suhu Kerja — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

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