2EDN7434RXTMA1 vs 1EDN7136GXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDN7434RXTMA1 dari Infineon dan 1EDN7136GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7434RXTMA1 1EDN7136GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Paket PG-TSSOP-8 (3.0 x 3.0 mm) PG-VSON-10-4 (leadless, thermal pad)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Active Output Voltage Clamping Yes —
Product Type — Low-side gate driver IC
Configuration — Single channel, non-inverting
Peak Source Current — 4 A
Peak Sink Current — 8 A
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Suhu Kerja — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon