2EDN7434RXTMA1 vs 1EDN7136GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDN7434RXTMA1 disebabkan oleh Infineon dan 1EDN7136GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDN7434RXTMA1 1EDN7136GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Kemasan PG-TSSOP-8 (3.0 x 3.0 mm) PG-VSON-10-4 (leadless, thermal pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Active Output Voltage Clamping Yes —
Product Type — Low-side gate driver IC
Configuration — Single channel, non-inverting
Peak Source Current — 4 A
Peak Sink Current — 8 A
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Suhu Operasi — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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