2N7002H6327XTSA2 vs BSS119NH6327XTSA1 Perbandingan
Perbandingan bersamaan detil 2N7002H6327XTSA2 dari Infineon dan BSS119NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 2N7002H6327XTSA2 | BSS119NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS (Planar) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Rentang Suhu Kerja | -55C to +150C (Tj) | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| Paket | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 [DATA_NEEDED: confirm from datasheet] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Industrial / Commercial Grade | AEC-Q101 (automotive grade) |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Packaging | — | Tape & Reel (3,000 pcs/reel) |