2N7002H6327XTSA2 vs BSS306NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil 2N7002H6327XTSA2 dari Infineon dan BSS306NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2N7002H6327XTSA2 BSS306NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS (Planar) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) 300 mA (Ta) 2.3 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical VGS(th) in V]
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
Tipe Mounting Surface Mount Surface Mount
Channel Mode Enhancement —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Qualification Industrial / Commercial Grade AEC-Q101 (Automotive)
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
FET Type — N-Channel
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Suhu Kerja — -55°C to +150°C (TJ)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

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