AFT26H050W26SR3 vs AFT26HW050GSR3 Perbandingan
Perbandingan bersamaan detil AFT26H050W26SR3 dari NXP Semiconductors dan AFT26HW050GSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteNXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | AFT26H050W26SR3 | AFT26HW050GSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Tipe Transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | — |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | Single transistor, internally input-matched |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | LDMOS (Laterally Diffused MOS), Airfast gen |
| Paket | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Tipe Mounting | Surface Mount / chassis-mount screw flange | Chassis Mount (bolt-down, flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Number | — | AFT26HW050GSR3 |
| Device Type | — | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Family | — | Airfast RF Power |
| Paket / Case | — | NI-780GS-4L4L (9-pin, ceramic) |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Suhu Kerja | — | -40 C to +150 C |