AFT26H050W26SR3 vs AFT26HW050GSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AFT26H050W26SR3 disebabkan oleh NXP Semiconductors dan AFT26HW050GSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteNXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifPengandingan Spesifikasi
| Parametr | AFT26H050W26SR3 | AFT26HW050GSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Jenis Transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | — |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | Single transistor, internally input-matched |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | LDMOS (Laterally Diffused MOS), Airfast gen |
| Kemasan | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Jenis Pemasangan | Surface Mount / chassis-mount screw flange | Chassis Mount (bolt-down, flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Number | — | AFT26HW050GSR3 |
| Device Type | — | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Family | — | Airfast RF Power |
| Kemasan / Case | — | NI-780GS-4L4L (9-pin, ceramic) |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Suhu Operasi | — | -40 C to +150 C |