AFT26H050W26SR3 vs AFT26HW050GSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AFT26H050W26SR3 sa pamamagitan ng NXP Semiconductors at AFT26HW050GSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteNXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AFT26H050W26SR3 | AFT26HW050GSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Uri ng Transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | — |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | Single transistor, internally input-matched |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | LDMOS (Laterally Diffused MOS), Airfast gen |
| Packhaging | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Uri ng Pagpapasok | Surface Mount / chassis-mount screw flange | Chassis Mount (bolt-down, flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Number | — | AFT26HW050GSR3 |
| Device Type | — | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Family | — | Airfast RF Power |
| Packhaging / Kaso | — | NI-780GS-4L4L (9-pin, ceramic) |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Tindminan RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Temperature na Operasyon | — | -40 C to +150 C |