AFT26H050W26SR3 vs AFT26HW050GSR3 比較
詳細並排比較 AFT26H050W26SR3 由 NXP Semiconductors 與 AFT26HW050GSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 Obsolete規格比較
| 參數 | AFT26H050W26SR3 | AFT26HW050GSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | Obsolete | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| 電晶體類型 | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | — |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | Single transistor, internally input-matched |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | LDMOS (Laterally Diffused MOS), Airfast gen |
| 封裝 | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| 安裝類型 | Surface Mount / chassis-mount screw flange | Chassis Mount (bolt-down, flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Number | — | AFT26HW050GSR3 |
| Device Type | — | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Family | — | Airfast RF Power |
| 封裝 / 外殼 | — | NI-780GS-4L4L (9-pin, ceramic) |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| RoHS 狀態 | — | Compliant |
| REACH Status | — | Compliant |
| 工作溫度 | — | -40 C to +150 C |