BAT42 vs BAT43 Perbandingan

Perbandingan bersamaan detil BAT42 dari STMicroelectronics dan BAT43 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BAT42 BAT43
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky Barrier —
Repetitive Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Operating Temperature up to 125 C —
Switching Speed Fast (Schottky, no reverse recovery) —
Paket DO-35 axial through-hole DO-35 (glass axial, through-hole)
Configuration Single diode Single diode
Technology Metal-to-silicon Schottky junction with guard ring ESD protection Metal-to-silicon Schottky barrier
Tipe Mounting Through Hole Through Hole
Application Class General purpose fast switching —
Status RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Manufacturer STMicroelectronics —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Dissipasi Listrik (Ptot) — 200 mW at Tl = 65 C
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Suhu Kerja — [DATA_NEEDED: operating temperature range]

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