BAT42 vs BAT43 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BAT42 disebabkan oleh STMicroelectronics dan BAT43 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BAT42 BAT43
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky Barrier —
Repetitive Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Operating Temperature up to 125 C —
Switching Speed Fast (Schottky, no reverse recovery) —
Kemasan DO-35 axial through-hole DO-35 (glass axial, through-hole)
Configuration Single diode Single diode
Technology Metal-to-silicon Schottky junction with guard ring ESD protection Metal-to-silicon Schottky barrier
Jenis Pemasangan Through Hole Through Hole
Application Class General purpose fast switching —
Status RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Manufacturer STMicroelectronics —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Pembuangan Kuasa (Ptot) — 200 mW at Tl = 65 C
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Suhu Operasi — [DATA_NEEDED: operating temperature range]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga