BAT42 vs BAT43 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BAT42 tarafından STMicroelectronics ve BAT43 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BAT42 BAT43
Marka STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small Signal Schottky Barrier —
Repetitive Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Operating Temperature up to 125 C —
Switching Speed Fast (Schottky, no reverse recovery) —
Paket DO-35 axial through-hole DO-35 (glass axial, through-hole)
Configuration Single diode Single diode
Technology Metal-to-silicon Schottky junction with guard ring ESD protection Metal-to-silicon Schottky barrier
Montaj Türü Through Hole Through Hole
Application Class General purpose fast switching —
RoHS Durumu [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Manufacturer STMicroelectronics —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Güç Tüketimi (Ptot) — 200 mW at Tl = 65 C
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]

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