BSC011N03LSIATMA1 vs IRLR8726TRPBF Perbandingan
Perbandingan bersamaan detil BSC011N03LSIATMA1 dari Infineon dan IRLR8726TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC011N03LSIATMA1 | IRLR8726TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| Suhu Hubung Kerja | -55 °C to +150 °C | -55C to +175C |
| Paket | PG-TDSON-8-7 (Surface Mount) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Part Number | — | IRLR8726TRPBF |
| Technology | — | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) at T_C | — | 86 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max | — | 5.8 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) min/max] |
| Gate Charge Q_g (typ.) | — | 15 nC |
| Power Dissipation P_D | — | 75 W at T_C |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Bebas Halogen | — | Yes |