BSC011N03LSIATMA1 vs IRLR8726TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSIATMA1 sa pamamagitan ng Infineon at IRLR8726TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC011N03LSIATMA1 IRLR8726TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V —
Channel Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C -55C to +175C
Packhaging PG-TDSON-8-7 (Surface Mount) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant
Part Number — IRLR8726TRPBF
Technology — StrongIRFET™ (HEXFET)
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) at T_C — 86 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max — 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) — 15 nC
Power Dissipation P_D — 75 W at T_C
Bilang ng Pins — 3 (Gate, Drain, Source)
Wala sa Halogen — Yes

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