BSC011N03LSIATMA1 vs IRLR8726TRPBF 比較
詳細並排比較 BSC011N03LSIATMA1 由 Infineon 與 IRLR8726TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC011N03LSIATMA1 | IRLR8726TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| 工作接面溫度 | -55 °C to +150 °C | -55C to +175C |
| 封裝 | PG-TDSON-8-7 (Surface Mount) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Part Number | — | IRLR8726TRPBF |
| Technology | — | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) at T_C | — | 86 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max | — | 5.8 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) min/max] |
| Gate Charge Q_g (typ.) | — | 15 nC |
| Power Dissipation P_D | — | 75 W at T_C |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| 無鹵素 | — | Yes |