BSC011N03LSTATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil BSC011N03LSTATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC011N03LSTATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount Surface Mount
Technology Trench MOSFET Trench MOSFET, silicon
Configuration Single with built-in diode —
Level MSL [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Rentang Suhu Kerja — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

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